Modeling and x-ray diffraction pattern simulation of ZnSe quantum dots

Document Type : Original Article

Authors

1 Department of Physics, Faculty of Science, Malayer University, Malayer, Iran

2 Malayer University

Abstract
In the present work, the X-ray diffraction (XRD) pattern of ZnSe quantum dots is simulated using a home-made computer program. ZnSe is an important semiconductor with an FCC-zinc blend stable crystalline phase owing a lattice constant of 5.6676 Å, which has widespread applications in optoelectronics, infrared detectors, and aerospace technology applications. In this study, XRD patterns are simulated for both bulk and nanoscale ZnSe. The results indicate that in the bulk phase, the diffraction peaks are very sharp and narrow, consistent with the standard reference cards. However, at the nanoscale, the peaks broaden and their intensity changes, indicating a reduction in crystallite size and an increase in structural defects. A comparison is made between the simulation and the experimental results, showing that the agreement between the experimental XRD pattern and the simulated one in terms of the number of peaks, their positions, relative intensities, and peak widths indicates good consistency. This research confirms that XRD simulation is a powerful and efficient tool for the structural analysis of nanomaterials, capable of accurately reproducing the effects of size and defects on diffraction patterns. Therefore, the developed program can play a significant role in the analysis and design of ZnSe semiconductor nanostructures and other compounds.

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  • Receive Date 19 May 2026
  • Revise Date 02 July 2026
  • Accept Date 05 July 2026