1
Department of Physics, Faculty of Basic Sciences, Malayer University, Malayer, Iran.
2
Department of Materials Engineering, Faculty of Engineering, Malayer University, Malayer, Iran
Abstract
In this work, nanostructured copper selenide (CuSe) thin films were fabricated using a simple solution‑based chemical bath deposition method, which is attractive due to its low cost, readily available precursors, and scalability for potential aerospace sensing applications. In the chemical bath deposition process, growth parameters play a crucial role in determining the physical and electronic properties of the final product. In addition to the concentration of selenium ions, the complexing agent is a key factor affecting film formation and properties. The complexing agent controls the release rate of metal ions in the solution and consequently influences the stoichiometry and electronic structure of the deposited films. It was observed that variations in the concentration of the complexing agent significantly modify the band gap energy .Specifically, increasing the concentration of the complexing agent leads to a reduction in the band gap energy. This behavior can be attributed to the corresponding increase in the effective concentration of free copper ions in the solution, which alters the growth mechanism and electronic structure of CuSe thin films. Therefore, the complexing agent, through its influence on the concentration of metal ions during deposition, plays a fundamental role in tuning the band gap energy, which is important for optimizing these thin films for aerospace sensing applications
Chobin,S. , Ghobadi,N. and abdi moghsudelo,M. S. (2025). Investigating the role of complexing agent in changing the ratio of copper selenide alloy semiconductor for infrared generation in aerospace systems.. (e241). Aerospace Defense, 4(3), e241
MLA
Chobin,S. , , Ghobadi,N. , and abdi moghsudelo,M. S. . "Investigating the role of complexing agent in changing the ratio of copper selenide alloy semiconductor for infrared generation in aerospace systems." .e241 , Aerospace Defense, 4, 3, 2025, e241.
HARVARD
Chobin S., Ghobadi N., abdi moghsudelo M. S. (2025). 'Investigating the role of complexing agent in changing the ratio of copper selenide alloy semiconductor for infrared generation in aerospace systems.', Aerospace Defense, 4(3), e241.
CHICAGO
S. Chobin, N. Ghobadi and M. S. abdi moghsudelo, "Investigating the role of complexing agent in changing the ratio of copper selenide alloy semiconductor for infrared generation in aerospace systems.," Aerospace Defense, 4 3 (2025): e241,
VANCOUVER
Chobin S., Ghobadi N., abdi moghsudelo M. S. Investigating the role of complexing agent in changing the ratio of copper selenide alloy semiconductor for infrared generation in aerospace systems.. Aerospace Defense, 2025; 4(3): e241.
